Transphorm, a supplier of Gallium Nitride (GaN) semiconductors, has launched its second 900 V Discipline-Impact Transistor (FET), the Gen III TP90H050WS. Transphorm’s gadgets now allow three-phase industrial methods and better voltage automotive electronics to make use of GaN.
The FET has a typical on-resistance of 50 mOhm with a 1000 V transient score, provided in a typical TO-247 bundle. It could possibly attain energy ranges of eight kW in a typical half bridge whereas sustaining larger than 99% efficiencies. Transphorm says the FET’s figures of advantage for Ron*Qoss (resonant switching topologies) and Ron*Qrr (onerous switching bridge topologies) are two to 5 occasions lower than these of frequent superjunction applied sciences in manufacturing, indicating extremely diminished switching losses.
The brand new FET is designed to be deployed in bridgeless totem-pole energy issue correction (PFC), half-bridge configurations utilized in DC to DC converters and inverters. Transphorm says the FET’s potential to help these topologies at a better voltage expands the corporate’s attain to incorporate three-phase industrial functions, together with EV chargers at larger battery voltage nodes.
Transporm plans to introduce a JEDEC-qualified model in Q1 2020. Transphorm’s first 900 V system, the TP90H180PS, with a typical on-resistance of 170 mOhm in a TO-220 bundle is JEDEC certified and has been out there by means of Digi-Key since 2017.
“Transphorm’s newest 900 V GaN product represents a serious milestone for business GaN energy transistors because it reaches the 1 kilovolt mark, an business first. This paves the best way for GaN to be a viable alternative at these larger voltage nodes,” mentioned Transphorm COO Primit Parikh. “With partial funding from ARPA-E for early threat discount and Energy America for preliminary product qualification, this effort represents profitable public-private partnership that accelerates GaN’s market adoption.”